Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367331
Reference39 articles.
1. Creep and dislocation velocities in gallium arsenide
2. Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography
3. Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
4. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces
5. Structural properties of partially relaxed InxGa1−xAs layers grown on (100) and misoriented GaAs substrates
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