Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide-Reference-Cited by-同舟云学术

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Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Published:2007-07-23 Issue:4 Volume:91 Page:043507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu F.,Koveshnikov S.,Ok I.,Kim H. S.,Zhang M.,Lee T.,Thareja G.,Yu L.,Lee J. C.,Tsai W.,Tokranov V.,Yakimov M.,Oktyabrsky S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2762295

Reference13 articles.

1. Unpinned GaAs MOS capacitors and transistors

2. Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability

3. Phosphidization of GaAs by a remote phosphine plasma process and its application to surface passivation of GaAs metal–semiconductor field-effect transistors

4. Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors;Journal of Applied Physics;2013-10-14

2. Electrically active interface defects in the In0.53Ga0.47As MOS system;Microelectronic Engineering;2013-09

3. MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate;Journal of Materials Science: Materials in Electronics;2010-02-04

4. InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS;Fundamentals of III-V Semiconductor MOSFETs;2010

5. Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics;Journal of Crystal Growth;2009-03

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