Author:
Hong M.,Kwo J.,Lin T. D.,Huang M. L.,Lee W. C.,Chang P.
Reference62 articles.
1. Hong M, Liu CT, Reese H, Kwo J (1999): Semiconductor-insulator interfaces. In: Webster JG (ed), Encyclopedia of electrical and electronics engineering, John Wiley & Sons, New York, pp 87–100.
2. Hong M, Passlack M, Mannaerts JP, Kwo J, Chu SNG, Moriya N, Hou SY, Fratello VJ (1996): Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy. J. Vac. Sci. Technol. B 14:2297–2300.
3. Hong M, Mannaerts JP, Bower JE, Kwo J, Passlack M, Hwang W-Y, Tu LW (1997): Novel Ga2O3(Gd2O3) passivation techniques to produce low Dit oxide-GaAs interfaces. J. Cryst. Growth 175,176:422–427.
4. Hong M, Kwo J, Kortan AR, Mannaerts JP, Sergent AM (1999): Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation. Science 283:1897–1900.
5. Ye PD, Wilk GD, Yang B, Kwo J, Gossmann H-JL, Hong M, Ng KK, Bude J (2004): Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition. Appl. Phys. Lett. 84:434–436.
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