Phosphidization of GaAs by a remote phosphine plasma process and its application to surface passivation of GaAs metal–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Phosphidization of GaAs by a remote phosphine plasma process and its application to surface passivation of GaAs metal–semiconductor field-effect transistors

Published:1999-05-17 Issue:20 Volume:74 Page:2999-3001
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sugino Takashi,Nozu Satoshi,Nakajima Shigeru

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.123992

Reference20 articles.

1. A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors

2. Unpinned (100) GaAs surfaces in air using photochemistry

3. Picosecond transient reflectivity of unpinned gallium arsenide (100) surfaces

4. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs

5. Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs

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