An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824066
Reference40 articles.
1. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation
2. Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide
3. Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
4. Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
5. High-Performance InAs Nanowire MOSFETs
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