Author:
Lin C.A.,Lin T.D.,Chiang T.H.,Chiu H.C.,Chang P.,Hong M.,Kwo J.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by
11 articles.
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1. GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation;Japanese Journal of Applied Physics;2023-12-01
2. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25
3. Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
4. InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
5. MBE—Enabling technology beyond Si CMOS;Journal of Crystal Growth;2011-05