Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109075
Reference12 articles.
1. Ga/sub 0.47/In/sub 0.53/As enhancement- and depletion-mode MISFETs with very high transconductance
2. High-efficiency GaInAs Microwave MISFET's
3. Characterization of InGaAs surface passivation structure having an ultrathin Si interface control layer
4. Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density
5. Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19
2. A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer;Applied Physics Letters;2009-01-05
3. In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm;Applied Physics Letters;2008-06-02
4. Selective Liquid-Phase Oxidation of InGaAs and Application to Metal-Oxide-Semiconductor InAlAs∕InGaAs Metamorphic HEMT Without Gate Recess;Journal of The Electrochemical Society;2008
5. Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide;Applied Physics Letters;2007-07-23
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