Migration‐enhanced epitaxy on a (111)Boriented GaAs substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102119
Reference6 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Near‐ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers
3. Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBE
4. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
5. Low‐temperature (350 °C) growth of AlGaAs/GaAs laser diode by migration enhanced epitaxy
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1. Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces;Journal of Crystal Growth;2017-11
2. Growth morphology of MnAs epilayers on GaAs(111)-B substrates by molecular beam epitaxy;Journal of Crystal Growth;2002-04
3. Relaxation mechanisms in single InxGa1−xAs epilayers grown on misoriented GaAs(111¯)B substrates;Journal of Applied Physics;1997-11-15
4. 1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications;Microelectronics Journal;1997-10
5. AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates;Microelectronics Journal;1996-07
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