Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
2. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
3. Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
4. Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces
5. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
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