Strains in HgTe/Hg0.1Cd0.9Te superlattices grown on (211)B Cd0.96Zn0.04Te substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366399
Reference22 articles.
1. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
2. Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBE
3. Piezoelectric effect in quantum wells grown on (211)B GaAs
4. Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices
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1. Full-Wafer Strain and Relaxation Mapping of Hg1−xCdxTe Multilayer Structures Grown on Cd1−yZnyTe Substrates;Journal of Electronic Materials;2019-05-23
2. Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate;Materials Research Express;2017-03-15
3. In-Plane Magnetization-Induced Quantum Anomalous Hall Effect;Physical Review Letters;2013-08-20
4. Band gap tuning in HgTe through uniaxial strains;Solid State Communications;2013-07
5. Inverted band structure of type-IIIHgTe/Hg1−xCdxTesuperlattices and its temperature dependence;Physical Review B;2003-07-02
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