AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference51 articles.
1. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
2. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
3. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
4. Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
5. Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates;Materials Science and Engineering: C;2008-07
2. Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy;Journal of Applied Physics;2005-09
3. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models;Semiconductors;2001-01
4. An Improved Calculation Model for Analysis of [111] InGaAs/GaAs Strained Piezoelectric Superlattices;ETRI Journal;1999-12-01
5. Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates;Microelectronics Journal;1999-04
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