Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93345
Reference17 articles.
1. Epitaxy of silicon doped gallium arsenide by molecular beam method
2. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
3. High quality Si-doped GaAs layers grown by molecular beam epitaxy
4. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
5. Transient electromagnetic penetration of a spherical shell
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