Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly-Reference-Cited by-同舟云学术

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Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly

Published:2018-02-21 Issue: Volume: Page:
ISSN:
Container-title:Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV
language:
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Author:

Simmonds Paul J.

Publisher

SPIE

Reference47 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. Improved quantum dot stacking for intermediate band solar cells using strain compensation

3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

5. Tensile-strained growth on low-index GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence;Crystal Growth & Design;2023-09-18

2. Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A;Journal of Crystal Growth;2020-03

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