Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence-Reference-Cited by-同舟云学术

Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Published:2023-09-18 Issue:10 Volume:23 Page:7385-7393
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kumar Rahul¹²^ORCID,Saha Samir K.²,Kuchuk Andrian²^ORCID,Maia de Oliveira Fernando²^ORCID,Khiangte Krista R.²³,Yu Shui-Qing⁴,Mazur Yuriy I.²^ORCID,Salamo Gregory J.²

Affiliation:

1. Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Pilani 333031, India

2. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

3. Physics Discipline, Indian Institute of Technology Gandhinagar, Gandhinagar 382424, India

4. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

Funder

University of Arkansas

Birla Institute of Technology and Science, Pilani

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00792

Reference37 articles.

1. Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates

2. The termination of the α-Al2O3 (0001) surface: a LEED crystallography determination

3. Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy

4. GaAs epitaxial growth on R-plane sapphire substrate

5. Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate

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