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Improved quantum dot stacking for intermediate band solar cells using strain compensation

Published:2014-10-16 Issue:44 Volume:25 Page:445402
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Simmonds Paul J,Sun Meng,Laghumavarapu Ramesh Babu,Liang Baolai,Norman Andrew G,Luo Jun-Wei,Huffaker Diana L

Funder

Advanced Research Projects Agency - Energy

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=44/a=445402/pdf

Reference27 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Thermodynamic consistency of sub-bandgap absorbing solar cell proposals

3. Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

4. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells

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1. Advances in the Use of Atomic Force Microscopy as a Diagnostic Tool for Solar Cells Characterization: From Material Design to Device Applications;physica status solidi (a);2023-12-03

2. Improved Optical and Electronic Properties of Single-Layer MoS<sub>2</sub> by Co Doping for Promising Intermediate - Band Materials;Key Engineering Materials;2022-01-04

3. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures;Journal of Alloys and Compounds;2020-08

4. Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A;Journal of Crystal Growth;2020-03

5. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

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