Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
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1. GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates;Crystals;2022-12-24
2. Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra;Semiconductors;2020-11
3. Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD;Materials Research;2017-03-23
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