As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Epitaxial growth and optical properties of semiconductor quantum wires
2. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates
3. Study of the homoepitaxial growth of GaAs on (631) oriented substrates
4. Structure and homoepitaxial growth of GaAs(631)
5. Ion-beam-directed self-organization of conducting nanowire arrays
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1. Control method for periodically faceted surfaces and application on AlGaAs/GaAs (6 3 1) heterostructures;Applied Surface Science;2023-02
2. Characterization of eigenstates interface-modulated in GaAs (631) multi-quantum well heterostructures;Journal of Applied Physics;2020-12-28
3. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01
4. Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure;Journal of Crystal Growth;2015-09
5. Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films;Journal of Crystal Growth;2013-09
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