InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates-Reference-Cited by-同舟云学术

InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates

Published:2018-01 Issue: Volume:95 Page:22-26
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Eugenio-López E.,Lopez-Lopez M.,Gorbatchev A.Yu.,Espinosa-Vega L.I.,Cortes-Mestizo I.E.,Mercado-Ornelas C.A.,Del Rı́o-De Santiago A.,Méndez-García Victor H.

Funder

CONACyT

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy;Yeh;Appl. Phys. Lett.,2002

2. Mode-locked quantum-dot lasers;Rafailov;Nat. Photon.,2007

3. Recent developments in compact ultrafast lasers;Keller;Nature,2003

4. Self-assembled quantum-dot superluminescent light-emitting diodes;Zhang;Adv. Opt. Photon.,2010

5. Quantum dot devices: handling the heat;Sugawara;Nat. Photon.,2009

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