InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1445269
Reference11 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
4. InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T0=385K) Grown by Metal Organic Chemical Vapour Deposition
5. InGaAs-GaAs quantum-dot lasers
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1. High Performance 1.3 μm Aluminum-Free Quantum Dot Lasers Grown by MOCVD;Optical Fiber Communication Conference (OFC) 2020;2020
2. 13 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers;Photonics Research;2018-03-27
3. Self-ordering of InAs nanostructures on (631)A/B GaAs substrates;Japanese Journal of Applied Physics;2018-01-17
4. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01
5. A GaAs-based self-aligned stripe distributed feedback laser;Semiconductor Science and Technology;2016-06-23
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