InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Author:

Yeh Nien-Tze,Liu Wei-Sheng,Chen Shu-Han,Chiu Pe-Chin,Chyi Jen-Inn

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High Performance 1.3 μm Aluminum-Free Quantum Dot Lasers Grown by MOCVD;Optical Fiber Communication Conference (OFC) 2020;2020

2. 13  μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers;Photonics Research;2018-03-27

3. Self-ordering of InAs nanostructures on (631)A/B GaAs substrates;Japanese Journal of Applied Physics;2018-01-17

4. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01

5. A GaAs-based self-aligned stripe distributed feedback laser;Semiconductor Science and Technology;2016-06-23

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