Self-ordering of InAs nanostructures on (631)A/B GaAs substrates-Reference-Cited by-同舟云学术

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Published:2018-01-17 Issue:2 Volume:57 Page:025201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Eugenio-López Eric,Mercado-Ornelas Christian Alejandro,Patil Pallavi Kisan,Cortes-Mestizo Irving Eduardo,Espinoza-Figueroa José Ángel,Gorbatchev Andrei Yu,Shimomura Satoshi,Espinosa-Vega Leticia Ithsmel,Méndez-García Víctor Hugo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2/a=025201/pdf

Reference28 articles.

1. Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

2. Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions

3. The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

4. Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth

5. Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates

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