Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain
2. MBE-grown metamorphic lasers for applications at telecom wavelengths
3. High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources
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5. High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector
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1. Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range;Journal of Crystal Growth;2019-07
2. Self-ordering of InAs nanostructures on (631)A/B GaAs substrates;Japanese Journal of Applied Physics;2018-01-17
3. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01
4. Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (115)A GaAs substrate;PHYSICA E;2013
5. Influence of GaAs(001) pregrowth surface morphology and reconstruction on the growth of InGaAs layers;Applied Surface Science;2013-03
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