High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20052675?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
2. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
3. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
4. Low-threshold quantum dot lasers with 201 nm tuning range
5. High-power 980 nm quantum dot broad area lasers
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1. High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers;Applied Physics Letters;2013-06-03
2. Design Considerations for High‐Power Single Spatial Mode Operation;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24
3. 15-W Fiber-Coupled Quantum-Dot Pump Module;IEEE Photonics Technology Letters;2012-06
4. High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy;Journal of the Korean Physical Society;2011-11-15
5. Multicolor InAs/InP(100) Quantum Dot Laser;Chinese Physics Letters;2011-11
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