Multicolor InAs/InP(100) Quantum Dot Laser
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/28/11/114212/pdf
Reference15 articles.
1. Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
2. p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency
3. Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core
4. Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy
5. Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy
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1. An Accurate Method of Modeling Self-Assembled InAs/InGaAsP/InP (001) Quantum Dot With Double-Capping Procedure;IEEE Journal of Quantum Electronics;2017-12
2. Analysis of ground state spectral splitting of quantum dot lasers aimed for tunable terahertz generation;Journal of the Optical Society of America B;2016-09-23
3. Thermal coefficient of InP-based quantum dot laser from cavity-mode measurements;Infrared Physics & Technology;2015-01
4. The developments of InP-based quantum dot lasers;Infrared Physics & Technology;2013-09
5. Multi-spectral lasing characteristics of InAs/GaAs quantum dot laser;Superlattices and Microstructures;2013-07
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