Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2985900
Reference13 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
3. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
4. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
5. Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
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