Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290601
Reference12 articles.
1. Gain and the threshold of three-dimensional quantum-box lasers
2. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
3. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
4. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
5. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
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