High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809730
Reference18 articles.
1. Quantum dots for lasers, amplifiers and computing
2. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
3. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
4. Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs
5. Monolithic dual-mode distributed feedback semiconductor laser for tunable continuous-wave terahertz generation
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