1550 nm‐Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side‐Wall Gratings Simultaneously Fabricated with a Ridge Waveguide-Reference-Cited by-同舟云学术

1550 nm‐Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side‐Wall Gratings Simultaneously Fabricated with a Ridge Waveguide

Published:2021-11-16 Issue: Volume: Page:2100453
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kaneko Runa¹^ORCID,Morita Ryosuke¹,Katsuhara Ryumi¹,Yabuki Ryota¹,Matsumoto Atsushi¹²,Akahane Koichi¹²^ORCID,Matsushima Yuichi¹,Ishikawa Hiroshi¹,Utaka Katsuyuki¹

Affiliation:

1. Faculty of Science and Engineering Waseda University 3-4-1 Okubo, Shinjuku Tokyo 169-8555 Japan

2. National Institute of Information and Communications Technology 4-2-1 Nukuikita-machi Koganei Tokyo 184-0015 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100453

Reference28 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

3. High-gain and low-threshold InAs quantum-dot lasers on InP

4. Highly stacked quantum-dot laser fabricated using a strain compensation technique

5. Low Noise Performance of Passively Mode-Locked 10-GHz Quantum-Dot Laser Diode

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Size Control and Photoluminescence Characteristics of InSb Quantum Dots on GaSb Substrates Grown by Molecular Beam Epitaxy;physica status solidi (a);2024-03-06

2. Regulation of the Temperature Field and Evolution of the Melt Convection Field During InP Crystal Growth with the Vertical Gradient Freeze Method;Journal of Electronic Materials;2023-08-24