Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
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1. Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots;Semiconductors;2023-02
2. Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques;2022 International Conference on Electrical Engineering and Photonics (EExPolytech);2022-10-20
3. Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots;Journal of Applied Physics;2022-06-21
4. Quantum-Dot Based Vertical External-Cavity Surface-Emitting Lasers With High Efficiency;IEEE Photonics Technology Letters;2021-07-15
5. Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers;Optics Express;2020-06-30
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