1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
Author:
Affiliation:
1. Univ. Kassel (Germany)
Publisher
SPIE
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1. On the principle operation of tunneling injection quantum dot lasers;Progress in Quantum Electronics;2021-09
2. Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range;Journal of Crystal Growth;2019-07
3. Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing;Journal of Crystal Growth;2019-06
4. Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier;Physical Review B;2018-06-26
5. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers;Journal of Crystal Growth;2018-06
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