High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector-Reference-Cited by-同舟云学术

High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

Published:2007-05-14 Issue:20 Volume:90 Page:201109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsao S.,Lim H.,Zhang W.,Razeghi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2740111

Reference10 articles.

1. Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors

2. High-performance mid-infrared quantum dot infrared photodetectors

3. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

4. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

5. High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array

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