Structure and homoepitaxial growth of GaAs(631)-Reference-Cited by-同舟云学术

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Structure and homoepitaxial growth of GaAs(631)

Published:2006-05 Issue:15 Volume:252 Page:5530-5533
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Méndez-García V.H.,Ramirez-Arenas F.J.,Lastras-Martínez A.,Cruz-Hernandez E.,Pulzara-Mora A.,Rojas-Ramirez J.S.,Lopez-Lopez M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. High index orientation effects of strained self-assembled InGaAs quantum dots

2. Low-index facet formation in InGaAs islands on GaAs (n11)B substrates

3. Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

4. InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy

5. Surface morphology and structure of the bare and InAs-covered GaAs()B surface

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-ordering of InAs nanostructures on (631)A/B GaAs substrates;Japanese Journal of Applied Physics;2018-01-17

2. New orientations in the stereographic triangle for self-assembled faceting;AIP Advances;2016-06

3. MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures;Journal of Crystal Growth;2013-09

4. As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A;Journal of Crystal Growth;2011-02

5. Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs;Physica B: Condensed Matter;2010-05

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