Low-index facet formation in InGaAs islands on GaAs (n11)B substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates
4. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
5. Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
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1. Structure, strain, and composition profiling of InAs/GaAs(211)B quantum dot superlattices;Journal of Applied Physics;2016-01-21
2. Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(\bar6\bar3\bar1);Japanese Journal of Applied Physics;2011-06-20
3. Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631);Japanese Journal of Applied Physics;2011-06-01
4. Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
5. Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates;physica status solidi (a);2009-03-30
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