Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120691
Reference18 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
4. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
5. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
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