Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy-Reference-Cited by-同舟云学术

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Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy

Published:2018-11-09 Issue:2 Volume:30 Page:025711
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lee S C^ORCID,Jiang Y-B,Durniak M,Wetzel C^ORCID,Brueck S R J^ORCID

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/30/i=2/a=025711/pdf

Reference16 articles.

1. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

2. Zinc-blende–wurtzite polytypism in semiconductors

3. Heteroepitaxial growth of cubic GaN on Si(001) coated with thin flat SiC by plasma-assisted molecular-beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The structure and performance study of PP random impact resistance copolymer;Polymer Bulletin;2022-03-19

2. Elastic Variation of Quasi-One-Dimensional Cubic-Phase GaN at Nanoscale;Crystal Growth & Design;2019-08-19

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