Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD-Reference-Cited by-同舟云学术

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

Published:2017-03-23 Issue:5 Volume:20 Page:1166-1173
ISSN:1980-5373
Container-title:Materials Research
language:
Short-container-title:Mat. Res.

Author:

Castillo-Ojeda Roberto Saúl¹,Díaz-Reyes Joel²,Arellano Miguel Galván²,Peralta-Clara María de la Cruz²,Veloz-Rendón Julieta Salomé²

Affiliation:

1. Universidad Politécnica de Pachuca, Mexico

2. Instituto Politécnico Nacional, Mexico

Publisher

FapUNIFESP (SciELO)

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.scielo.br/pdf/mr/v20n5/1516-1439-mr-1980-5373-MR-2016-0512.pdf

Reference15 articles.

1. Growth of GaAs by MOCVD using a solid arsenic source;Peña-Sierra R;Journal of Crystal Growth,1991

2. Photoluminescence and Secondary Ion Mass Spectroscopy characterization of GaAs-AlGaAs quantum wells grown on GaAs (1 0 0) substrates with different surface treatments;Guillén-Cervantes A;Applied Surface Science,2009

3. ASTM F76 - Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors,2000

4. Properties of Gallium Arsenide;Brozel MR,1996

5. Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases;Schläpfer F;Low temperature MBE growth of high quality AlGaAs, Journal of Crystal Growth,2016

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