Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95997
Reference16 articles.
1. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
2. P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs
3. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
4. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
5. Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers
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