Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces-Reference-Cited by-同舟云学术

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Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces

Published:2017-11 Issue: Volume:477 Page:25-29
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kawaharazuka A.,Horikoshi Y.

Funder

Grant-in-Aid for Scientific Research C

Scientific Research B

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures

2. RHEED oscillation and surface diffusion length on GaAs(111)B surface

3. Relation between reflection high-energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B

4. Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy

5. Surface reconstructions of GaAs(111)A and (111)B: A static surface phase study by reflection high‐energy electron diffraction

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1. Effects of A s 8 structure formation on the surface morphology and internal microstructure of GaAs thin films;Journal of Physics: Condensed Matter;2024-05-28

2. Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence;Crystal Growth & Design;2023-09-18

3. Coherent growth and characterization of van der Waals 1T−VSe2 layers on GaAs(111)B using molecular beam epitaxy;Physical Review Materials;2020-08-17

4. Migration-Enhanced Epitaxy and its Application;Molecular Beam Epitaxy;2019-02-08

5. Impact of temperature and nitrogen composition on the growth of GaAsPN alloys;Journal of Crystal Growth;2018-03

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