Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference11 articles.
1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
2. Pseudomorphic InGaAs high electron mobility transistors
3. AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
4. Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs ( n 11)A ( n =1–4) substrates
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures;Journal of Crystal Growth;2013-09
2. Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junction;Transactions of the Materials Research Society of Japan;2012
3. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells;Journal of Luminescence;2011-05
4. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates;Journal of Luminescence;2011-01
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