1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications-Reference-Cited by-同舟云学术

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1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications

Published:1997-10 Issue:8-10 Volume:28 Page:947-955
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Greenberg Joseph,Eastman Lester F.

Publisher

Elsevier BV

Subject

General Engineering

Reference26 articles.

1. Analysis of gain in determining T0 in 1.3 μm semiconductor lasers;Ackerman;IEEE J. Select. Topics Quantum Electron.,1995

2. Semiconductor Lasers;Agrawal,1993

3. Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape;Tsai;IEEE J. Select. Topics Quantum Electron.,1995

4. Packaged 1.55 μm DFB laser with 25 GHz modulation bandwidth;Morton;Electron. Lett.,1994

5. Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity Ino0.35Ga0.65As-GaAs multiple-quantum-well lasers;Weisser;IEEE Photon. Tech. Lett.,1996

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4.3.7 References for 4.3;Landolt-Börnstein - Group III Condensed Matter

2. 4.3.4 Other well materials;Landolt-Börnstein - Group III Condensed Matter

3. 4.3.3 InAs and In{1-y}Ga{y}As;Landolt-Börnstein - Group III Condensed Matter

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