Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates-Reference-Cited by-同舟云学术

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Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

Published:1987-04-20 Issue:Part 2, No. 4 Volume:26 Page:L302-L305
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayakawa Toshiro,Kondo Masafumi,Suyama Takahiro,Takahashi Kosei,Yamamoto Saburo,Hijikata Toshiki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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