Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes
Author:
Affiliation:
1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funder
National Basic Research Program of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906218
Reference25 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
4. Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
5. On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes
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1. Performance Enhancement of InGaN Light-Emitting Diodes with InGaN/GaN/InGaN Triangular Barriers;ECS Journal of Solid State Science and Technology;2021-08-01
2. Improvement in efficiency of yellow Light Emitting Diode using InGaN barriers and modified electron injection layer;Optik;2020-03
3. Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output;Optik;2017-07
4. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission;physica status solidi (a);2017-03-09
5. Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection;Scientific Reports;2015-12
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