Performance Enhancement of InGaN Light-Emitting Diodes with InGaN/GaN/InGaN Triangular Barriers
Author:
Funder
Key R&D Plan of Jiangsu Province
Science and Technology Projects of Yangzhou
National Natural Science Foundation of China
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac1c53/pdf
Reference19 articles.
1. III-Nitride photonics;Tansu;IEEE Photonics J.,2010
2. Active efficiency as a key parameter for understanding the efficiency droop in InGaN-based light-emitting diodes;Shim;ECS J. Solid State Sci. Technol.,2019
3. Review—recent advances and challenges in indium gallium nitride (InxGa1-xN) materials for solid state lighting;Kour;ECS J. Solid State Sci. Technol.,2020
4. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes;Xu;Appl. Phys. Lett.,2009
5. Influence of geometrical shape on the characteristics of the multiple InN/InxGa1−xN quantum dot solar cells;Aouami;Nanomaterials.,2021
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