Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep17227.pdf
Reference32 articles.
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2. Chichibu, S. F. et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nat. Mater. 5, 810–816 (2006).
3. Meyaard, D. S. et al. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes. Appl. Phys. Lett. 99, 251115 (2011).
4. Dai, Q. et al. On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. Appl. Phys. Lett. 98, 033506 (2011).
5. Ji, Y. et al. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier. Opt. Lett. 38, 202 (2013).
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