On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms-Reference-Cited by-同舟云学术

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Published:2011-01-17 Issue:3 Volume:98 Page:033506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dai Qi,Shan Qifeng,Cho Jaehee,Schubert E. Fred,Crawford Mary H.,Koleske Daniel D.,Kim Min-Ho,Park Yongjo

Funder

U.S. Department of Energy

National Nuclear Security Administration, U.S. Department of Energy

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3544584

Reference16 articles.

1. Origin of efficiency droop in GaN-based light-emitting diodes

2. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

3. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

4. Performance of High-Power AlInGaN Light Emitting Diodes

5. Auger recombination in InGaN measured by photoluminescence

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