Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Published:2010-09-27 Issue:13 Volume:97 Page:133507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dai Qi,Shan Qifeng,Wang Jing,Chhajed Sameer,Cho Jaehee,Schubert E. Fred,Crawford Mary H.,Koleske Daniel D.,Kim Min-Ho,Park Yongjo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3493654

Reference16 articles.

1. Origin of efficiency droop in GaN-based light-emitting diodes

2. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

3. On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

4. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

5. Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

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