Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission-Reference-Cited by-同舟云学术

Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

Published:2017-03-09 Issue:8 Volume:214 Page:1600868
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Alam Saiful¹²³,Sundaram Suresh²,li Xin²,Jamroz Miryam E.³,El Gmili Youssef²,Robin Ivan C.³,Voss Paul L.¹²,Salvestrini Jean-Paul²⁴,Ougazzaden Abdallah¹²

Affiliation:

1. School of Electrical and Computer Engineering; Georgia Institute of Technology; Atlanta Georgia 30332 USA

2. Georgia Tech-CNRS; UMI 2958; 57070 Metz France

3. CEA-LETI; Minatec Campus; F-38054 Grenoble France

4. LMOPS; University of Lorraine, EA4423; 57070 Metz France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Efficiency droop in nitride-based light-emitting diodes

2. Three-dimensional GaN for semipolar light emitters

3. Advantages of InGaN Light Emitting Diodes With Alternating Quantum Barriers

4. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

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