Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications-Reference-Cited by-同舟云学术

Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications

Published:2020-10-07 Issue:13 Volume:128 Page:134101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Khaldi O.¹^ORCID,Jomni F.¹^ORCID,Gonon P.²^ORCID

Affiliation:

1. Département de Physique, Université de Tunis El Manar, LMOP(LR99ES17), 2092 Tunis, Tunisia

2. Université. Grenoble Alpes, LTM, F-38000 Grenoble, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0025130

Reference40 articles.

1. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

2. Quantitative characterization and modeling of sub-bandgap absorption features in thin oxide films from spectroscopic ellipsometry data

3. Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition

4. High-κ gate dielectrics: Current status and materials properties considerations

5. Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application

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