High-Performance HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform-Reference-Cited by-同舟云学术

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High-Performance HfO₂/Al₂O₃ Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform

Published:2024-03 Issue:3 Volume:71 Page:2036-2042
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mukhopadhyay Partha¹^ORCID,Fletcher Ivan²^ORCID,Couvertier Zuriel C.²^ORCID,Morris Julio³,Perez Jennifer³,Nichols Chris³,Allgair John⁴,Vandevere Jim⁴,Schoenfeld Winston V.⁵^ORCID,Aoki Sara⁶,Novoselic Enzo⁶^ORCID,Lombardo Shara⁶,Triyoso Dina⁶,Kretzschmar Jon⁷,deVilliers Anton⁶,Fulford Jim²^ORCID

Affiliation:

1. Tokyo Electron (TEL) Technology Center America (TTCA), Kissimmee, FL, USA

2. TTCA, Kissimmee, FL, USA

3. SkyWater, Kissimmee, FL, USA

4. BRIDG, Kissimmee, FL, USA

5. CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, FL, USA

6. TTCA, Albany, NY, USA

7. TEL, Dallas, TX, USA

Funder

Tokyo Electron Ltd

Skywater Technology

BRIDG. The review of this article was arranged by Editor J. F. Conley

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10415363.pdf?arnumber=10415363

Reference32 articles.

1. A Study of Dielectric Relaxation and Capacitance Matching of ${\rm Al}_{2}{\rm O}_{3}/{\rm HfO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ MIM Capacitors

2. Alternative dielectrics to silicon dioxide for memory and logic devices

3. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics

4. Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors

5. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid reactant-enabled atomic layer deposition of HfO2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode;Materials Today Communications;2024-08

2. Characterization and Reliability Study of an Al-Doped HfO₂-Based High-Density 2.5-D MIMCAP;IEEE Transactions on Electron Devices;2024-06

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