Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates-Reference-Cited by-同舟云学术

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Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

Published:2022-12 Issue: Volume:33 Page:104664
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Kartci Aslihan^ORCID,Vancik Silvester^ORCID,Prasek Jan,Hrdy Radim,Schneider Michael^ORCID,Schmid Ulrich,Hubalek Jaromir

Funder

Central European Institute of Technology

Horizon 2020

Grantová Agentura České Republiky

Vysoké Učení Technické v Brně

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference35 articles.

1. Nanotubular metal–insulator–metal capacitor arrays for energy storage;Banerjee;Nature Nanotechnol.,2009

2. Memory cell with a stacked capacitor;Gutsche,2001

3. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation;Zhang;J. Alloys Compd.,2014

4. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation;He;J. Mater. Chem. C,2014

5. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al2O3 passivation layer;He;ACS Appl. Mater. Interfaces,2014

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2. Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer;Ionics;2024-04-17

3. High-Performance HfO₂/Al₂O₃ Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform;IEEE Transactions on Electron Devices;2024-03

4. Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard;Advanced Quantum Technologies;2023-05-18

5. Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range;Journal of Materials Science: Materials in Electronics;2023-01

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