Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer-Reference-Cited by-同舟云学术

Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Published:2024-04-17 Issue:6 Volume:30 Page:3651-3659
ISSN:0947-7047
Container-title:Ionics
language:en
Short-container-title:Ionics

Author:

Bengi S.,Çetinkaya H. G.,Altındal Ş.,Durmuş P.

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11581-024-05527-z.pdf

Reference67 articles.

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3. Karadeniz S, Yıldız DE (2023) Frequency dependent dielectric spectroscopy of Au/n-Si structure with stannic oxide (SnO2) interfacial layer. J Mater Sci: Mater Electron 34:1416

4. Büyükbaş-Uluşan A, AltındalYerişkin S, Tataroğlu A, Balbasi M, Azizian-Kalandaragh Y (2020) Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer, optoelectron. Adv Mater Rapid Commun 14:256

5. Sevgili Ö, Taşçoığlu İ, Boughdachi S, Azizian-Kalandaragh Y, Altındal Ş (2019) Examination of dielectric response of Au/HgS-PVA/n-Si (MPS)structure by impedance spectroscopy method. Phys B Condens Matter 566:125

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